por LARRUQUERT | Abr 29, 2003 | articles-2003, OpticalConstans-non self-consistent methods
Juan I Larruquert, Ritva A.M Keski-Kuha Abstract Thin films of MgF2 deposited by evaporation is a material widely used for its transparency in the far ultraviolet (FUV) down to ∼115 nm. In this paper the optical properties of ion-beam sputtered (IBS) MgF2 in the FUV...
por LARRUQUERT | Abr 29, 2002 | articles-2002, OpticalConstans-non self-consistent methods
Juan I. Larruquert; Jose Antonio Mendez; Jose Antonio Aznarez Abstract Bilayers of a thin, nonoxidized Al film over an Ir film are prepared. The bilayers are intended to enhance the reflectance of Al below the Al plasma wavelength (λ p~83 nm). Above λp the bilayers...
por LARRUQUERT | Abr 29, 2002 | articles-2002, OpticalConstans-non self-consistent methods
Juan I. Larruquert, José A. Méndez, José A. Aznárez, Anton S. Tremsin and Oswald H. W. Siegmund Abstract The optical constants of thin films of CsI, KI, and KBr and the quantum efficiency (QE) of planar photocathodes made with these alkali halides in the 53.6–174.4-nm...
por LARRUQUERT | Abr 29, 2000 | articles-2000, OpticalConstans-non self-consistent methods
Juan I. Larruquert and Ritva A. M. Keski-Kuha Abstract Reflectance measurements and optical constants of thin films of ion-beam-deposited SiC, Mo, Mg2Si, and InSb and of evaporated Cr have been measured in the extreme-ultraviolet (EUV) spectral region from 49.0 to...
por LARRUQUERT | Abr 29, 2000 | articles-2000, OpticalConstans-non self-consistent methods
Juan I Larruquert, Ritva A. M. Keski-Kuha Abstract Reflectance measurements of ion-beam-deposited (IBD) C films were performed in the extreme ultraviolet (EUV) spectral region from 49 to 200 nm. Near normal incidence reflectance of IBD C films was determined to be...
por LARRUQUERT | Abr 29, 2000 | articles-2000, OpticalConstans-non self-consistent methods
Juan I. Larruquert and Ritva A. M. Keski-Kuha Abstract Hot-pressed B4C is found to have a high normal reflectance in the extreme-UV spectral region above 49 nm. This reflectance is comparable with or higher than chemical-vapor-deposited SiC in the spectral region from...
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